PHILIPS BLF547 Data Sheet

Summary

The BLF547 is a dedicated dual push-pull power MOS transistor designed for high-power communications transmitter applications in the Ultra High Frequency (UHF) range. This comprehensive technical manual provides engineers with detailed product specifications, including full RF performance curves, electrical characteristics, thermal resistance data, and package dimensions. It is essential documentation for circuit designers developing reliable, broadband UHF amplification systems.

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查询BLF547供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BLF547 UHF push-pull power MOS transistor

Product specification October

Page Summary Contents For PHILIPS BLF547 Data Sheet

Page 1 查询BLF547供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF547 UHF push-pull power MOS transistor Product specification October

Page 2 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures e...

Page 3 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise...

Page 4 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. U...

Page 5 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 MRB029 MRB020 handbook, halfpage handbook, halfpage RDS(on) (Ω) (p F) o C) VDS (V) Tj ( ID 3 A; VGS 10 V. VGS 0; ...

Page 6 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h 0.15 K/W, unless otherwise specified. RF perfo...

Page 7 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 +VD C12 C13 Vbias pa ge id th input L2 C21C19 L23 output C10 MBC232 Vbias 500 MHz. Fig.11 Test circuit for class-...

Page 8 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C13, C16 electrolytic capacitor µF, 63 V 2222 030 28109 C18 ...

Page 9 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 R2 VDS handbook, full pagewidth VDS MBC231 - 1 200 mm handbook, full pagewidth strap strap strap strap rivets riv...

Page 10 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 MRB023 MRB026 handbook, halfpage handbook, halfpage (Ω) ri f (MHz) f (MHz) Class-B operation; VDS = 28 V; IDQ = 1...

Page 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2 H1 Mw2 U2H EE1 w1 BM 10 ...

Page 12 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for ...

Manual Details

Brand	Philips
Pages	12
File Size	126.63 KB
Published	July 12, 2026

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Frequently Asked Questions

What applications is the BLF547 transistor designed for?

It is designed for communications transmitter applications in the UHF frequency range.

Are there specific safety precautions when handling this device?

Yes, it contains beryllium oxide (BeO), and after use, it must be disposed of as chemical or special waste.

What is the absolute maximum total power dissipation rating?

The datasheet indicates a maximum total power dissipation up to 225 W at T = 25°C.

How should static electricity risks be mitigated during handling?

The gate-source input must use a common source connection for protection against static charge during transport and handling.