PHILIPS BLF278 Data Sheet
Summary
This datasheet documents the Philips BLF278 VHF push-pull power MOS transistor, a dual N-channel enhancement-mode vertical D-MOS device in a 4-lead SOT262A1 balanced flange package with two ceramic caps. Designed for broadcast transmitter applications in the VHF frequency range, the transistor delivers 300W output power at 108MHz/50V in class-B CW operation with over 20dB power gain and over 60% efficiency. In class-C CW at 108MHz/50V, output power is 300W with 18dB typical gain and 80% typical
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DATA SHEET
BLF278 VHF push-pull power MOS transistor
Product Specification Oct
Supersedes data of October 1992
Page Summary Contents For PHILIPS BLF278 Data Sheet
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查询BLF278供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Oct Supersedes data of October 1992
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 FEATURES PINNING - SOT262A1 High power gain PIN SYMBOL DESCRIPTION Easy power control d1 drain Good thermal stabi...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. U...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 CHARACTERISTICS Tj °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE621 MGE615 handbook, halfpage handbook, halfpage RDSon (mΩ) Tj (°C) VDS (V) VGS V; ID A. VGS 0; f MHz. Fig.6 D...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 APPLICATION INFORMATION Class-B operation RF performance in CW operation in a common source push-pull test circui...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE682 MGE683 handbook, halfpage handbook, halfpage PL (W) PL (W) Class-B operation; VDS V; IDQ 0.1 A; f MHz; Cla...
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Philips Semiconductors Product Specification ha nd bo ok , f ul l p ag ew id th VHF push-pull power MOS transistor BLF278 in pu ou tp ut L2 +V IC ig .1 la ss -B te st irc ui t a t f z.
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 List of components (see Figs and 13). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C33, C34 multi...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. L17, L18 stripline; note length 24.5 mm width 6 mm L19, L20 ...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 handbook, full pagewidth strap strap strap strap strap strap strap strap IC1 C35 50 Ω R2 and R7 T1 output input s...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE685 MGE686 handbook, halfpage handbook, halfpage Zi ZL (Ω) (Ω) RL f (MHz) f (MHz) Class-B operation; VDS V; ID...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 Class-AB operation RF performance in CW operation in a common source push-pull test circuit. Th °C; Rth mb-h 0.15...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE614 MGE612 handbook, halfpage handbook, halfpage Gp (2) PL (W) PL (W) Class-AB operation; VDS V; IDQ 0.5 A; f ...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 in tp +V IC handbook, full pagewidth +V ig .2 la ss -A te st irc ui t a t f z.
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 List of components (see Figs and 22). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer cera...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. L14, L17 grade 3B Ferroxcube wideband HF chokes in parallel ...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 handbook, full pagewidth strap strap strap strap Hollow Hollow rivets rivets strap strap strap strap to R2,R7 VDD...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE625 MGE611 handbook, halfpage handbook, halfpage zi XL f (MHz) f (MHz) Class-AB operation; VDS V; IDQ 0.5 A; C...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 PACKAGE OUTLINE 11 max 11 max 5.8 max2.92 2.29 1.65 21.85 seating plane max 3.0 max MSA285 - 2 34.3 max Dimension...
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Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for ...
Manual Details
| Brand | Philips |
|---|---|
| Pages | 21 |
| File Size | 184.79 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What specific safety precautions must be taken with this component?
The product contains beryllium oxide (BeO). It must be disposed of as chemical or special waste and never placed in general domestic waste.
Is there a risk when handling the transistor during setup?
Yes, the gate-source input must be protected against static discharge during transport or handling.
What is the maximum thermal resistance from the junction to the mounting base?
The maximum thermal resistance (Rth j-mb) for both sections equally loaded is 0.35 K/W.