PHILIPS BLF276 Data Sheet
Summary
This comprehensive manual provides detailed specifications and application guidelines for the BLF276 VHF power MOS transistor. Designed for large signal amplifier circuits in the VHF frequency range, this component offers high power gain and excellent thermal stability, delivering up to 100W of output power in Class-B operation. The guide includes technical parameters, performance curves, limiting values, and physical dimensions, making it an essential resource for electronics engineers designing robust radio or communication systems.
Page 1 Text Content
查询BLF276供应商
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF276 VHF power MOS transistor
Product specification December 1997
Page Summary Contents For PHILIPS BLF276 Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 13 |
| File Size | 86.74 KB |
| Published | July 04, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What package does the BLF276 use?
It is encapsulated in a 6-lead, SOT119 pill-package envelope with a ceramic cap.
What output power does the BLF276 deliver?
It delivers 100 W output power in class-B operation at a 50 V supply voltage.
What safety precaution is needed for the BLF276?
It contains beryllium oxide; do not damage the BeO disc, and dispose of it as special waste.
What is the max drain-source voltage of BLF276?
The maximum drain-source voltage is 110 V per the absolute maximum ratings.