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PHILIPS BLF245B Data Sheet

Summary

The BLF245B is a high-power, dual push-pull N-channel MOS transistor designed for large signal amplifier applications in the VHF frequency range. This technical guide provides comprehensive product specifications and operational data for engineers requiring reliable performance. The manual details crucial electrical characteristics, absolute maximum limiting values, thermal resistance ratings, and package dimensions (SOT279). It is an essential resource for designers building advanced high-power circuit boards that require excellent power control and stability in VHF systems.

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DATA SHEET

BLF245B VHF push-pull power MOS transistor

Product specification September

Page Summary Contents For PHILIPS BLF245B Data Sheet

Page 1 查询BLF245B供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF245B VHF push-pull power MOS transistor Product specification September
Page 2 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability fpage Gold metallization en...
Page 3 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwis...
Page 4 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. ...
Page 5 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B MGP182 MGP183 handbook, halfpage handbook, halfpage RDS(on) (Ω) Tj (°C) VDS (V) ID 0.75 A; VGS 10 V VGS 0; f = 1...
Page 6 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF per...
Page 7 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B handbook, full pagew idth D.U.T. input output +VG R6 MGP187 f = 175 MHz. +VD Fig.11 Test circuit for class-B ope...
Page 8 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C8, C10 multilayer ceramic chip capacitor 680 p F (note 1) ...
Page 9 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B +VG +VD handbook, full pagewidth C12 C11 MBA378 +VG +VD 200 mm handbook, full pagewidth rivetrivet copper copper...
Page 10 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B MGP188 MGP189 handbook, halfpage handbook, halfpage −5 RL f (MHz) f (MHz) Class-B operation; VDS = 28 V; IDQ = 2...
Page 11 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT279A H1 Cw2 w1 Bp 10 mm scale...
Page 12 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for...

Manual Details

Brand Philips
Pages 12
File Size 98.01 KB
Published July 12, 2026
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Frequently Asked Questions

How should I dispose of this transistor?

Dispose of it as chemical or special waste according to local regulations; never throw it out with general or domestic waste.

Is there a specific handling precaution for the gate-source input?

The gate-source input must have a common source connection to protect against static charge during transport and handling.

What is the maximum total power dissipation limit?

The continuous drain current ($ ext{I}_{ ext{D}}$) can dissipate up to -75 W when both sections are equally loaded at $\text{T} = 25 °\text{C}$.

Can this device be used in life support systems?

No, these products are not designed for use in life support appliances due to the risk of malfunction.