PHILIPS BLF244 Data Sheet

Summary

Philips BLF244 is a VHF power MOS transistor designed for large signal amplifier applications in the VHF frequency range, delivering 15W output power with greater than 13dB power gain and 50% efficiency in class-B CW operation at 175MHz. The N-channel enhancement mode D-MOS transistor features high power gain, low noise figure, good thermal stability, and withstands full load mismatch. Housed in a 4-lead SOT123 flange envelope with ceramic cap and gold metallization for reliability, it is rated for 65V drain-source voltage and 3A DC drain current. It targets professional VHF communication equipment manufacturers and broadcast amplifier system designers.

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查询BLF244供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BLF244 VHF power MOS transistor

Product specification September 1992

Page Summary Contents For PHILIPS BLF244 Data Sheet

Page 1 查询BLF244供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF244 VHF power MOS transistor Product specification September 1992

Page 2 Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES PIN CONFIGURATION High power gain Low noise figure Easy power control k, halfpage Good thermal stability Withstand...

Page 3 Philips Semiconductors Product specification VHF power MOS transistor BLF244 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS dr...

Page 4 Philips Semiconductors Product specification VHF power MOS transistor BLF244 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-sourc...

Page 5 Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP154 MGP155 handbook, halfpage handbook, halfpage RDS(on) (p F) (Ω) Tj (°C) VDS (V) VGS 0; f MHz. VGS V; ID 0.75 A. Fig.6...

Page 6 Philips Semiconductors Product specification VHF power MOS transistor BLF244 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 3 K/W; unless otherwise specified. RF performance in C...

Page 7 Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP159 MGP160 handbook, halfpage handbook, halfpage Gp ηD (d B) PL (W) PIN (W) PL (W) Class-B operation; VDS 12.5 V; IDQ m ...

Page 8 Philips Semiconductors Product specification VHF power MOS transistor BLF244 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C12 multilayer ceramic c...

Page 9 Philips Semiconductors Product specification VHF power MOS transistor BLF244 handbook, full pagewidth rivetstrap strap +VG C6 MGP162 The circuit and components are situated on one side of the epoxy fi...

Page 10 Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP164 MGP165 handbook, halfpage handbook, halfpage f (MHz) f (MHz) Class-B operation; VDS V; IDQ m A; Class-B operation; V...

Page 11 Philips Semiconductors Product specification VHF power MOS transistor BLF244 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A 10 mm scale DIMENSIONS (millimetre dimensions ar...

Page 12 Philips Semiconductors Product specification VHF power MOS transistor BLF244 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product de...

Manual Details

Brand	Philips
Pages	12
File Size	95.43 KB
Published	July 04, 2026

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Frequently Asked Questions

What is the max VDS of the BLF244?

The maximum drain-source voltage is 65 V.

How should the BLF244 be handled safely?

Protect the gate-source input from static charge; the BeO disc must not be damaged.

What package does the BLF244 use?

It is encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.

Can BLF244 be used in life support systems?

No, it is not designed for life support applications.