PHILIPS BFG591 Data Sheet
Summary
Discrete semiconductor datasheet for the Philips BFG591 NPN 7 GHz wideband transistor in SOT223 4-pin plastic package. Features high power gain, low noise figure, high transition frequency (7 GHz), and gold metallization for excellent reliability. Quick reference: 15V VCEO max, 200mA IC max, 2W power dissipation at 80 degrees C solder point, DC current gain 60-250, 0.7pF feedback capacitance, 13dB maximum unilateral gain at 900MHz. Applications in MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range.
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查询BFG591供应商
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG591 NPN 7 GHz wideband transistor
Product specification 1995 Sep 04
Supersedes data of November 1992 File under Discrete Semiconductors, SC14
Page Summary Contents For PHILIPS BFG591 Data Sheet
Page 1
查询BFG591供应商 DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 File under Discrete Semiconductors, SC14
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION fpage High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package....
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX....
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 CHARACTERISTICS Tj °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector...
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC791 MRA749 Ptot handbook, halfpage h FE Ts (o C) VCE V. Fig.3 DC current gain as a function of collector Fig.2 Powe...
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC795 MGC794 handbook, halfpage handbook, halfpage gain gain (d B) (d B) Gmax GUM IC (m A) IC (m A) MHz; VCE V. GHz; ...
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC797 MGC798 −20 −20 handbook, halfpage handbook, halfpage dim d2 (d B) (d B) −30 −30 IC (m A) IC (m A) VCE V; Vo m V...
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 handbook, full pagewidth 1.0 3 GHz 0.2 40 MHz MGC799 VCE V; IC m A; Zo Ω. Fig.11 Common emitter input reflection coeff...
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 handbook, full pagewidth 3 GHz 0.5 0.4 0.3 0.2 0.1 40 MHz MGC801 VCE V; IC m A. Fig.13 Common emitter reverse transmis...
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 SPICE parameters for the BFG591 crystal SEQUENCE No. PARAMETER VALUE UNIT IS 1.341 f A handbook, halfpage Ccb BF 123.5...
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 PACKAGE OUTLINE handbook, full pagewidth 0.95 0.85 seating plane 2.3 0.1 BM max 0.60 MSA035 - 1 Dimensions in mm. Fig....
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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for produ...
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 99.14 KB |
| Published | June 16, 2026 |
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