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Philips BFG541 Data Sheet

Summary

This BFG541 NPN transistor is a high-performance silicon planar device engineered for wideband RF applications across the GHz spectrum. Its core features include high power gain, low noise figure, and high transition frequency, making it ideal for advanced telecommunications systems. The accompanying technical manual provides detailed specifications covering electrical characteristics, thermal ratings, packaging details (SOT223), and performance data necessary for integrating the component into devices such as cellular/cordless phone networks, radar detectors, satellite TV tuners, and fiber-optic repeaters.

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查询BFG541供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BFG541 NPN 9 GHz wideband transistor

Product specification September 1995

File under Discrete Semiconductors, SC14

Page Summary Contents For Philips BFG541 Data Sheet

Page 1 查询BFG541供应商 DISCRETE SEMICONDUCTORS DATA SHEET BFG541 NPN 9 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14
Page 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure emitter High transition frequency Gold metallization...
Page 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter VCES col...
Page 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 CHARACTERISTICS Tj °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-o...
Page 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 MRA654 - 1 MRA655 handbook, halfpage handbook, halfpage IC (m A) Ts (o C) VCE 10 V. VCE 8 V; Tj °C. Fig.2 Power derati...
Page 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 In Figs 6 to 9, GUM = maximum power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRA659 MRA658 hand...
Page 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 MEA977 MEA976 –20 –20 handbook, halfpage handbook, halfpage im d2 Fig.10 Intermodulation distortion as a function of F...
Page 8 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 handbook, full pagewidth Fmin = 1.3 d B G = 15 d B ΓOPT ΓMS 0.2 0.5 180° 0° Gmax = 15.3 d B MRA668 IC 10 m A; VCE 8 V;...
Page 9 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 handbook, full pagewidth 3 GHz 40 MHz MRA662 IC 40 m A; VCE 8 V. Zo Ω. Fig.16 Common emitter input reflection coeffici...
Page 10 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 handbook, full pagewidth 3 GHz 0.5 0.4 0.3 0.1 40 MHz0.2 180° 0° −90° MRA664 IC 40 m A; VCE 8 V. Fig.18 Common emitter...
Page 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 e1 Mbp detail X ...
Page 12 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for produ...

Manual Details

Brand Philips
Pages 12
File Size 144.60 KB
Published July 10, 2026
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Frequently Asked Questions

What applications is this NPN transistor intended for?

It is designed for wideband applications in the GHz range, such as cellular telephones, radar detectors, and SATV/MATV amplifiers.

Am I safe to operate it above its specified limiting values?

No. Stress above one or more limiting values may cause permanent damage to the device.

What package type is used for mounting this transistor?

It uses a plastic SOT223 package, which features a collector pad for good heat transfer during mounting.