Philips BFG520 Data Sheet
Summary
This manual details the NPN 9 GHz wideband transistor, including the BFG520, BFG520/X, and BFG520/XR. It covers technical specifications, pin configurations for SOT143B and SOT143R packages, and application details for RF frontends in cellular and satellite systems.
Page 1 Text Content
查询BFG520X供应商
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Page Summary Contents For Philips BFG520 Data Sheet
Page 1
查询BFG520X供应商 DISCRETE SEMICONDUCTORS DATA SHEET BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR FEATURES PINNING fpage High power gain PIN DESCRIPTION Low noise figure BFG520 (Fig.1) Code: N36 ...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDIT...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX....
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR MRA670-1 MRA671 handbook, halfpage handbook, halfpage Ptot h FE (m W) IC (m A) Ts (o C) VCE 6 V; ...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR In Figs 7 to 10, GUM maximum unilateral power gain; MSG = maximum stable gain; Gmax maximum avail...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR MEA975 MEA974 −20 −20 handbook, halfpage handbook, halfpage dim d2 (d B) (d B) IC (m A) IC (m A) ...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR handbook, full pagewidth stability circle 90° pot. unst. region 0.6 Fmin = 1. 1 d B 0.4 MRA684 IC...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR handbook, full pagewidth 90° 3 GHz 40 MHz MRA678 IC 20 m A; VCE 6 V. Zo Ω. Fig.17 Common emitter ...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR handbook, full pagewidth 90° 3 GHz 40 MHz MRA680 IC 20 m A; VCE 6 V. Fig.19 Common emitter revers...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B e1 detail X scale DIMENSIONS (m...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Plastic surface mounted package; reverse pinning; 4 leads SOT143R e1 detail X scale DIMENSIONS (m...
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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal spe...
Manual Details
| Brand | Philips |
|---|---|
| Pages | 13 |
| File Size | 114.73 KB |
| Published | June 20, 2026 |
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Frequently Asked Questions
What are the typical applications of the BFG520 transistor?
RF frontend in GHz range, analog/digital cellular phones, cordless telephones (CT1, CT2, DECT), radar detectors, pagers, satellite TV tuners, and repeater amplifiers in fiber-optic systems.
What is the maximum collector-emitter voltage for the BFG520?
15 V (open base).
How is the BFG520 pinout configured?
Pin 1: collector, pin 2: base, pin 3: emitter, pin 4: emitter (SOT143B package).
What is the transition frequency (fT) of the BFG520?
9 GHz typical at IC=20 mA, VCE=6 V, f=1 GHz.
What is the total power dissipation of the BFG520?
300 mW maximum up to Ts=88°C.