Philips BFG425W Data Sheet
Summary
The BFG425W is a high-performance, NPN double polysilicon wideband transistor designed for challenging RF front end applications up to 25 GHz. Engineered with features such as high power gain and low noise figure, it is essential for wideband systems including cellular communication (DECT/PHS), radar detectors, pagers, and SATV tuners. This manual provides detailed technical specifications, operational characteristics, breakdown voltages, and absolute maximum ratings required by RF engineers designing reliable, high-frequency circuits.
Page 1 Text Content
查询BFG425W供应商
DISCRETE SEMICONDUCTORS
BFG425W NPN 25 GHz wideband transistor Product specification Mar Supersedes data of 1997 Oct File under Discrete Semiconductors, SC14
Page Summary Contents For Philips BFG425W Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 115.30 KB |
| Published | July 04, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What applications is the BFG425W transistor suited for?
It can be used in RF front ends, wideband applications (like analog and digital cellular), radar detectors, pagers, satellite television tuners (SATV), and high frequency oscillators.
How much power can the collector dissipate under normal conditions?
The total power dissipation is rated at 135 mW when the junction temperature is below 103 °C.
What are the key performance metrics (High Frequency/Gain)?
It offers a very high power gain (-20 to -17 dB max) and has a high transition frequency ($f_T$), reaching up to 25 GHz.
How is this product packaged?
The transistor comes in a plastic, 4-pin dual-emitter SOT343R package.