Philips BF909WR Data Sheet

Summary

The Philips BF909WR datasheet provides complete technical specifications for this N-channel dual-gate MOS-FET designed for VHF and UHF applications at supply voltages from 3 to 7V. This enhancement-type field-effect transistor in a miniature SOT343R package features high forward transfer admittance (36-50 mS), low noise figure (2dB typical at 800MHz), and superior cross-modulation performance during AGC. Includes detailed electrical characteristics, S-parameters, and handling precautions. Essent

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查询BF909WR供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BF909WR N-channel dual-gate MOS-FET

Product specification Sep

Supersedes data of 1995 Apr File under Discrete Semiconductors, SC07

Page Summary Contents For Philips BF909WR Data Sheet

Page 1 查询BF909WR供应商 DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Sep Supersedes data of 1995 Apr File under Discrete Semiconductors, SC07

Page 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with ...

Page 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. ...

Page 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note...

Page 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR MLB937 MLB936 handbook, halfpage handbook, halfpage gain reduction (d B) V (V)G1 S VDS V; VGG V; fw MHz. funw MHz; Tamb...

Page 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR MLB940 MLB941 handbook, halfpage handbook, halfpage ID V = 4 VG2 S fs (m S) VDS V. VDS V. VG2-S V. Tj °C. Tj °C. Fig.7 ...

Page 7 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR MLB944 MLB945 handbook, halfpage handbook, halfpage ID V = 5 VGG (m A) V = 5 VGG VDS V; Tj °C. VDS V; Tj °C. RG1 kΩ (co...

Page 8 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR MLB948 MLB949 handbook, halfpage fs fs (m S) bos (m S) (deg) f (MHz) f (MHz) VDS V; VG2 V. VDS V; VG2 V. ID m A; Tamb °...

Page 9 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR Table 1 Scattering parameters: VDS V; VG2-S V; ID m A; Tamb °C MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUD...

Page 10 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR PACKAGE OUTLINE 1.00 handbook, full pagewidth max 0.2BM0.2AM0.2 1.8 MSB367 Dimensions in mm. Fig.18 SOT343R.

Page 11 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for produc...

Page 12 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 34 Waterloo Road, NORTH RYDE, NSW...

Manual Details

Brand	Philips
Pages	12
File Size	167.44 KB
Published	June 16, 2026

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Frequently Asked Questions

What specific operating feature makes this FET ideal for certain devices?

It was specially designed for use at 5 V supply voltage and provides superior cross-modulation performance during AGC.

What must be protected when handling or transporting the device?

The gate-source input must be protected against static discharge.

What are the maximum allowed drain-source voltage and total power dissipation?

The maximum drain-source voltage is -7V, and the total power dissipation is 280 mW.