Philips BF904WR Data Sheet
Summary
The BF904WR is a high-performance N-channel dual-gate MOS-FET amplifier ideal for VHF and UHF communication systems. This detailed product manual provides full technical specifications, including dynamic performance characteristics, thermal dissipation limits, and advanced measurements necessary for design integration. It is designed for engineers working on professional communications equipment, such as television tuners, requiring stable low noise gain control across a wide frequency range.
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查询BF904WR供应商
DISCRETE SEMICONDUCTORS
DATA SHEET
BF904WR N-channel dual-gate MOS-FET
Product specification 1995 Apr 25
File under Discrete Semiconductors, SC07
Philips Semiconductors
Page Summary Contents For Philips BF904WR Data Sheet
Page 1
查询BF904WR供应商 DISCRETE SEMICONDUCTORS DATA SHEET BF904WR N-channel dual-gate MOS-FET Product specification 1995 Apr 25 File under Discrete Semiconductors, SC07 Philips Semiconductors
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with ...
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. ...
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note...
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MLD268 MRA769 handbook, halfpage0 gain Yfs reduction (d B) T ( C) V (V)AGC MHz. Tj °C. Fig.3 Forward transfer admittanc...
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MLD269 MLD271 handbook, halfpage handbook, halfpage ID V = 1.4 VG1 S V = 4 VG2 S (m A) IG1 3.5 V (µA) V (V)DS V (V)G1 S...
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MLD275 MLD274 handbook, halfpage handbook, halfpage V (V)GG V = V (V)GG VDS V; VG2-S V. VG2-S V. RG1 kΩ (connected to V...
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MLD277 MLD278 handbook, halfpage is rs (deg) f (MHz) f (MHz) VDS V; VG2 V. VDS V; VG2 V. ID m A; Tamb °C. ID =10 m A; T...
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR DUT Ω≈ RGEN R2 4.7 n F C4 VGG MLD171 Fig.19 Cross-modulation test set-up. 1995 Apr 25
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR Table 1 Scattering parameters: VDS =5 V; VG2-S V; ID m A MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGL...
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR PACKAGE OUTLINE 1.00 max 0.1 0.2BM0.2AM0.2 1.8 MSB367 Dimensions in mm. Fig.20 SOT343R. 1995 Apr 25
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Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for produc...
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 111.55 KB |
| Published | July 06, 2026 |
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