Philips 2N7002E Data Sheet
Summary
This N-channel TrenchMOS™ FET is a high-performance, surface-mounted transistor built for robust electrical switching in logic circuit applications. The accompanying manual serves as a comprehensive resource for engineers, detailing precise operational characteristics, absolute maximum ratings, thermal behavior curves, and dynamic specifications necessary for reliable design. It is designed for use in circuits requiring fast, low-power switching, such as logic-level translators or high-speed line drivers.
Page 1 Text Content
2N7002E N-channel Trench MOS™ FET Rev. 02 — 26 April 2005 Product data sheet
1. Product profile
1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS™ technology.
1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package Trench MOS™ technology
1.3 Applications Logic level translator High speed line driver
1.4 Quick reference data VDS ID m A
RDSon Ptot 0.83
2. Pinning information Table 1: Pinning Pin Description Simplified outline Symbol
gate (G) source (S) drain (D)
mbb076
SOT23
Page Summary Contents For Philips 2N7002E Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 11 |
| File Size | 81.37 KB |
| Published | June 20, 2026 |
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Frequently Asked Questions
What package does the 2N7002E use?
TO-236AB plastic surface mounted package with 3 leads (SOT23).
What are common applications for this FET?
Logic level translator and high speed line driver.
What is the maximum continuous drain current?
385 mA at 25 °C when V_GS=10V.
What is the thermal resistance from junction to solder point?
Maximum is 150 K/W.