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Fuji Xerox and Fujifilm FUJI 2SK2639-01 Data Sheet (1)

Summary

Ideal for engineers designing robust power management circuits, this datasheet provides comprehensive technical specifications for a high-voltage N-channel MOSFET. The manual covers essential performance parameters, including Absolute Maximum Ratings, detailed electrical characteristics (like On-State Resistance and switching times), and thermal modeling curves. Use this resource to ensure optimal selection and reliable integration of the component into demanding applications such as DC-DC converters, UPS systems, and high-speed power amplifiers.

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现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎好!2SK2639-01 N-channel MOS-FET

FAP-IIS Series 450V 0,65Ω 10A 100W

Features > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated

Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier

Maximum Ratings and Characteristics > Equivalent Circuit Absolute Maximum Ratings (T C=25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 450 V Continous Drain Current I D 10 A Pulsed Drain Current I D(puls) 40 A Gate-Source-Voltage V GS ±35 V Repetitive or Non-Repetitive (Tch ≤ 150°C) I AR 10 A Avalanche Energy E AS 255 m J Max. Power Dissipation P D 100 W Operating and Storage Temperature Range T ch 150 °C

stg -55 ~ +150 °C

Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID=1m A VGS=0V 450 V Gate Threshhold Voltage V GS(th) ID=1m A VDS=VGS 3,5 4,0 4,5 V Zero Gate Voltage Drain Current I DSS VDS=450V Tch=25°C 10 500 µA

VGS=0V Tch=125°C 0,2 1,0 m A

Gate Source Leakage Current I GSS VGS=±35V VDS=0V 10 100 n A Drain Source On-State Resistance R DS(on) ID=5A VGS=10V 0,58 0,65 Ω Forward Transconductance g fs ID=5A VDS=25V 3 6 S Input Capacitance C iss VDS=25V 950 1450 p F Output Capacitance C oss VGS=0V 180 270 p F Reverse Transfer Capacitance C rss f=1MHz 80 120 p F Turn-On-Time ton (ton=td(on)+tr) t d(on) VCC=300V 25 40 ns

r ID=10A 70 110 ns

Turn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 70 110 ns

f RGS=10 Ω 50 80 ns

Avalanche Capability I AV L = 100µH Tch=25°C 10 A Diode Forward On-Voltage V SD IF=2x IDR VGS=0V Tch=25°C 1,1 1,65 V Reverse Recovery Time t rr IF=IDR VGS=0V 400 ns Reverse Recovery Charge Q rr -d IF/dt=100A/µs T ch=25°C 5,0 µC

- Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 35 °C/W

th(ch-c) channel to case 1,25 °C/W

Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98

Page Summary Contents For Fuji Xerox and Fujifilm FUJI 2SK2639-01 Data Sheet (1)

Page 1 现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎好!2SK2639-01 N-channel MOS-FET FAP-IIS Series 450V 0,65Ω 10A 100W Features > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power...
Page 2 N-channel MOS-FET as [m J] 2SK2639-01 [F (O ) [ [A 450V 0,65Ω 10A 100W FAP-IIS Series > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch Typical Transfer Char...